器件名称: FDG6332C_F085
功能描述: 20V N & P-Channel PowerTrench MOSFETs
文件大小: 284.44KB 共8页
简 介:FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs
March 2009
FDG6332C_F085
20V N & P-Channel PowerTrench MOSFETs
Features
Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V Q2 –0.6 A, –20V. RDS(ON) = 420 m @ VGS = –4.5 V RDS(ON) = 630 m @ VGS = –2.5 V Low gate charge High performance trench technology for extremely low RDS(ON) SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick) Qualified to AEC Q101 RoHS Compliant
General Description
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
Applications
DC/DC converter Load switch LCD display inverter
S G D D
Pin 1
1 2 3
Complementary
6 5 4
G S
SC70-6
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25 C unless otherwise noted
o
Parameter
Q1
20 ±12
(Note 1)
Q2
–20 ±12 –0.6 –2 0.3 –55 to +150
Units
V V A W °C
0.7 2.1
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°C/W
Package Mar……
