器件名称: FDG410NZ
功能描述: Single N-Channel PowerTrench MOSFET 20 V, 2.2 A, 70 m
文件大小: 289.67KB 共7页
简 介:FDG410NZ Single N-Channel PowerTrench MOSFET
March 2009
FDG410NZ
Single N-Channel PowerTrench MOSFET
20 V, 2.2 A, 70 m Features General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an extremely low rDS(on) and gate charge (Qg) in a small package.
Max rDS(on) = 70 m at VGS = 4.5 V, ID = 2.2 A Max rDS(on) = 77 m at VGS = 2.5 V, ID = 2.0 A Max rDS(on) = 87 m at VGS = 1.8 V, ID = 1.8 A Max rDS(on) = 115 m at VGS = 1.5 V, ID = 1.5 A HBM ESD protection level > 2 kV (Note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability Fast switching speed Low gate charge RoHS Compliant
Applications
DC/DC converter Power management Load switch
D D
S D 1 D 2 G D D G 3 4 S 6 D 5 D
SC70-6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C (Note 1a) Ratings 20 ±8 2.2 6.0 0.42 0.38 -55 to +150 Units V V A W °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 300 333 °C/W
Package Marking a……
