器件名称: FBAT54CDW
功能描述: SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
文件大小: 182.2KB 共4页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diodes
FBAT54CDW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES z Low Forward Voltage Drop
z
WBFBP-06C
(2×2×0.5) unit: mm
1
Fast Switching SCHOTTKY DIODE
APPLICATION Ultra high speed switching, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) Maximum Ratings @TA=25℃ Parameter
Peak Repetitive reverse voltage DC Blocking Voltage Average Rectified Output Current Power Dissipation Junction temperature Storage temperature range
FBAT54CDW Marking:KL7
Symbol
VRM VR IO PD TJ TSTG
Limits
30 100 150 125 -65-125
Unit
V mA mW ℃ ℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR
unless
Test
otherwise
specified）
MIN 30 2 240 320 400 500 1000 10 5 mV MAX UNIT V
conditions
IR= 100μA VR=25V IF=0.1mA IF=1mA
uA
Forward
voltage
VF
IF=10mA IF=30mA IF=100mA
Total
capacitance
CT t rr
VR=1V,f=1MHz IF=10mA, IR=10mA~1mA RL=100Ω
pF nS
Reverse recovery time
Typical Characteristics
Symbol A A1 b D E D1 E1 e L k z
Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.420 REF. 0.800 REF. 0.650 TYP. 0.400 REF. 0.350 REF. 0.500 REF.
Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.017 REF. 0.032 REF. 0.026 TYP……
