器件名称: 2N3792
功能描述: PNP HIGH POWER SILICON TRANSISTOR
文件大小: 64.35KB 共2页
简 介:TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/379 Devices 2N3791 2N3792 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg
2N3791
60 60
2N3792
80 80 7.0 4.0 10 5.0 85.7
Unit
Vdc Vdc Vdc Adc Adc W W
0
@ TA = +250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range
-65 to +200 Max. 1.17
C
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly @ 28.57 mW/0C for TA > +250C 2) Derate linearly @ 0.857 mW/0C for TC > +1000C
0
Unit C/W
TO-3* (TO-204AA)
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Cutoff Current VCE = 50 Vdc VCE = 70 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc 2N3791 2N3792 2N3791 2N3792 2N3791 2N3792 V(BR)CEO 60 80 5.0 5.0 5.0 5.0 Vdc
ICES
mAdc
ICEX
mAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 1 of 2
2N3791, 2N3792 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc Symbol 2N3791 2N3792 IC……
