器件名称: 2SC1472KBTZ-E
功能描述: Silicon NPN Epitaxial, Darlington
文件大小: 174.82KB 共6页
简 介:2SC1472(K)
Silicon NPN Epitaxial, Darlington
REJ03G0688-0200 (Previous ADE-208-1054) Rev.2.00 Aug.10.2005
Application
High gain amplifier
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1))
1. Emitter 2. Collector 3. Base
3 2 1
3 2 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 40 30 10 300 500 500 150 –55 to +150 Unit V V V mA mA mW °C °C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SC1472(K)
Electrical Characteristics
(Ta = 25°C)
Item Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CEO ICBO IEBO hFE1*1 hFE2*1 hFE3*1 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time VCE(sat) VBE(sat) fT Cob ton Min 30 — — 2000 3000 3000 — — 50 — — Typ — — — — — — — — — — 60 Max — 100 100 100000 — — 1.5 2.0 — 10 — V V MHz pF ns Unit V nA nA Test conditions IC = 1 mA, RBE = ∞ VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V (Pulse Test) IC = 400 mA, VCE = 5 V (Pulse Test) IC = 100 mA, IB = 0.1 mA IC = 100 mA, IB = 0.1 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 11 V IC = 100 IB1 = 100 mA IB2 = –IB1
Turn off time Storage time Note: hFE1 hFE……
