器件名称: 2SC1214DTZ-E
功能描述: Silicon NPN Epitaxial
文件大小: 57.47KB 共5页
简 介:2SC1214
Silicon NPN Epitaxial
REJ03G0686-0200 (Previous ADE-208-1050) Rev.2.00 Aug.10.2005
Application
Low frequency amplifier
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1))
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 50 4 500 600 150 –55 to +150 Unit V V V mA mW °C °C
Rev.2.00 Aug 10, 2005 page 1 of 4
2SC1214
Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE*1 hFE VCE(sat) Min 50 50 4 — 60 10 — Typ — — — — — — 0.2 0.64 Max — — — 0.5 320 — 0.6 — Unit V V V A Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 500 mA (pulse test) V V IC = 150 mA, IB = 15 mA (Pulse test) VCE = 3 V, IC = 10 mA
Collector to emitter saturation voltage
Base to emitter voltage VBE — Note: 1. The 2SC1214 is grouped by hFE as follows. B C D 60 to 120 100 to 200 160 to 320
Rev.2.00 Aug 10, 2005 page 2 of 4
2SC1214
Main Characteristics
Maximum Collector Dissipation Curve Typical Output Characteristics (1)
100 1.0 0.9 0.8 80 0.7 0.6 0.5 40 0.4 0.3 20 0.2 0.……
