EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > MICROSEMI > 2N3740_1

2N3740_1

器件名称: 2N3740_1
功能描述: PNP POWER SILICON TRANSISTOR
文件大小: 58.03KB    共2页
生产厂商: MICROSEMI
下  载:    在线浏览   点击下载
简  介:TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/441 Devices 2N3740 2N3741 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC 2N3740 60 60 2N3741 80 80 Unit Vdc Vdc Vdc Adc Adc W W 0 C @ TC = +250C (1) @ TC = +1000C Operating & Storage Junction Temperature Range 7.0 2.0 4.0 25 14 -65 to +200 Max. 7.0 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @143 mW/0C for TC > +250C 0 TO-66 (TO-213AA) Unit C/W *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 40 Vdc VCE = 60 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 2N3740 2N3741 2N3740 2N3741 2N3740 2N3741 2N3740 2N3741 V(BR)CEO 60 80 10 10 300 300 100 100 100 Vdc ICEO Adc ICEX ηAdc ICBO ηAdc IEBO ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3740, 2N3741 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS ……
相关电子器件
器件名 功能描述 生产厂商
2N3740_1 PNP POWER SILICON TRANSISTOR MICROSEMI
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2