器件名称: 2SC2001
功能描述: Plastic-Encapsulated Transistors
文件大小: 59.52KB 共1页
简 介:Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SC2001
FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO:
TRANSISTOR (NPN) TO-92 0.6 0.7 30 W (Tamb=25℃) A V
1. EMITTER
2. COLLECTOR
3. BASE
Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat)
Test
conditions
MIN 30 25 5
MAX
UNIT V V V
Ic=100A , IE=0 IC=10mA , IB=0 IE=100A, IC=0 VCB=30 V , IE=0 VCE=20 V , IB=0 VEB=5 V , IC=0
0.1 0.1 0.1 90 400 0.6 1.2
A A A
VCE=1V, IC=100mA IC=700mA, IB= 70mA IC= 700mA, IB=70mA VCE=6V, IC= 10mA
V V
Transition frequency
fT f = 30MHz
50
MHz
CLASSIFICATION OF hFE
Rank Range M 90-180 L 135-270 K 200-400
……
