器件名称: 2N3715
功能描述: NPN HIGH POWER SILICON TRANSISTOR
文件大小: 64.18KB 共2页
简 介:TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/408 Devices 2N3715 2N3716 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC
2N3715
60 80
2N3716
80 100
Units
Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W
@ TA = 250C @ TC =1000C Operating & Storage Junction Temperature Range
7.0 4.0 10 5.0 85.7 -65 to +200 Max. 1.17
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 28.57 mW/0C for TA >250C 2) Derate linearly 0.857 W/0C for TC >1000C
0
TO-3* (TO-204AA)
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 80 Vdc VCB = 100 Vdc Emitter-Base Breakdown Voltage VEB = 7.0 Vdc Collector-Emitter Cutoff Current VBE = 1.5 Vdc, VCE = 60 Vdc VBE = 1.5 Vdc, VCE = 80 Vdc 2N3715 2N3716 2N3715 2N3716 V(BR)CEO 60 80 10 10 1.0 1.0 1.0 Vdc
ICBO
Adc
IEBO 2N3715 2N3716 ICEX
mAdc mAdc
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2N3715, 2N3716 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Collector-Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Symbol 2N3715 2N3716 ICES Mi……
