器件名称: 2SA0885
功能描述: Silicon PNP epitaxial planar type
文件大小: 95.68KB 共5页
简 介:Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 I Features
Output of 3 W can be obtained by a complementary pair with 2SC1846 TO-126B package which requires no insulation plate for installation to the heat sink
8.0+0.5 –0.1 φ 3.16±0.1
3.8±0.3 11.0±0.5
3.2±0.2
1.9±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 45 35 5 1.5 1 1.2 *1 5 *2 Junction temperature Storage temperature 150 55 to +150 °C °C Unit V V V A A W
0.75±0.1 4.6±0.2
0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1
16.0±1.0
1
2
1: Emitter 2: Collector 3: Base TO-126B Package
Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink
I Electrical Characteristics TC = 25°C
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio IEBO VCBO VCEO hFE1
*
Conditions VCB = 20 V, IE = 0 VCE = 20 V, IB = 0 VEB = 5V, IC = 0 IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCE = 10 V, IC = 500 mA VCE = 5 V, IC = 1 A IC = 500 mA, IB = 50 mA VCB = 10 V, IE = 50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Min
Typ
Max 0.1 100 10
45 35 85 50 0.5 200 20 30 340
3.05±0.1
Unit A A A V V
hFE2 Collector to emitter saturation voltage Tran……
