器件名称: 2N3585
功能描述: NPN HIGH POWER SILICON TRANSISTOR
文件大小: 65.32KB 共2页
简 介:TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/384 Devices 2N3584 2N3585 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCBO VCER VEBO IB IC PT TJ, Tstg Symbol RθJC
2N3584
250 375 300
2N3585
300 500 400
Units
Vdc Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W
@ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range
6.0 1.0 2.0 2.5 35 -65 to +200 Max. 5.0
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 14.85 mW/0C for TA > +250C 2) Derate linearly @ 200 mW/0C for TC > +250C
TO-66* (TO-213AA)
0
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Breakdown Voltage IC = 15 mAdc Collector-Emitter Cutoff Current VCE = 150 Vdc Collector-Emitter Cutoff Current VCE = 300 Vdc, VBE = 1.5 Vdc VCE = 400 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc 2N3584 2N3585 2N3584 2N3585 V(BR)CEO 250 300 375 500 5.0 1.0 1.0 0.5 Vdc
V(BR)CER
Vdc
ICEO 2N3584 2N3585 ICEX
mAdc mAdc
IEBO
mAdc
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2N3584, 2N3585 JAN SERIES
ELECTRICAL CHARACTER……
