器件名称: K9F5608U0C-DCB0
功能描述: 512Mb/256Mb 1.8V NAND Flash Errata
文件大小: 655.94KB 共39页
简 介:ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification.
> AC characteristics : Refer to Table Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0 K9F5608Q0C-XXB0, K9F5616Q0C-XXB0 K9K1208Q0C-XXB0, K9K1216Q0C-XXB0 Improvement schedule : The components without this restriction will be available from work week 23 or after. Workaround : Relax the relevant timing parameters according to the table.
Table
Parameters Specification Relaxed Condition tWC 45 80 tWH 15 20 tWP 25 60 tRC 50 80 tREH 15 20 tRP 25 60
UNIT : ns tREA 30 60 tCEA 45 75
Sincerely, chwoosun@sec.samsung.com Product Planning & Application Eng. Memory Division Samsung Electronics Co.
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K9F5608U0C-VCB0,VIB0,FCB0,FIB0 K9F5608Q0C-DCB0,DIB0,HCB0,HIB0 K9F5608U0C-YCB0,YIB0,PCB0,PIB0 K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0 K9F5616U0C-YCB0,YIB0,PCB0,PIB0 K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
Document Title
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. Add the specification of Block Lock scheme.(Page 32~35) 5.……
