EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > SAMSUNG > K9F5608Q0C-DIB0

K9F5608Q0C-DIB0

器件名称: K9F5608Q0C-DIB0
功能描述: 512Mb/256Mb 1.8V NAND Flash Errata
文件大小: 655.94KB    共39页
生产厂商: SAMSUNG
下  载:    在线浏览   点击下载
简  介:ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0 K9F5608Q0C-XXB0, K9F5616Q0C-XXB0 K9K1208Q0C-XXB0, K9K1216Q0C-XXB0 Improvement schedule : The components without this restriction will be available from work week 23 or after. Workaround : Relax the relevant timing parameters according to the table. Table Parameters Specification Relaxed Condition tWC 45 80 tWH 15 20 tWP 25 60 tRC 50 80 tREH 15 20 tRP 25 60 UNIT : ns tREA 30 60 tCEA 45 75 Sincerely, chwoosun@sec.samsung.com Product Planning & Application Eng. Memory Division Samsung Electronics Co. 1 K9F5608U0C-VCB0,VIB0,FCB0,FIB0 K9F5608Q0C-DCB0,DIB0,HCB0,HIB0 K9F5608U0C-YCB0,YIB0,PCB0,PIB0 K9F5608U0C-DCB0,DIB0,HCB0,HIB0 K9F5616Q0C-DCB0,DIB0,HCB0,HIB0 K9F5616U0C-YCB0,YIB0,PCB0,PIB0 K9F5616U0C-DCB0,DIB0,HCB0,HIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. Add the specification of Block Lock scheme.(Page 32~35) 5.……
相关电子器件
器件名 功能描述 生产厂商
K9F5608Q0C-DIB0 512Mb/256Mb 1.8V NAND Flash Errata SAMSUNG
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2