器件名称: K9F1G16Q0M-YIB0
功能描述: 1Gb Gb 1.8V NAND Flash Errata
文件大小: 713.91KB 共38页
简 介:ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table
Affected Products : K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0 Improvement schedule : The components targeted to meet the specification is scheduled to be available by workweek 25 along with the final specification values. Workaround : Relax the relevant timing parameters according to the table.
Table
Parameters Specification Relaxed Condition tWC 45 80 tWH 15 20 tWP 25 60 tRC 50 80 tREH 15 20 tRP 25 60
UNIT : ns tREA 30 60 tCEA 45 75
Sincerely, chwoosun@sec.samsung.com Product Planning & Application Eng. Memory Division Samsung Electronics Co.
1
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0 K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. Iol(R/B) of 1.8V is changed. - min. value : 7mA --> 3mA - Typ. value : 8mA --> 4mA 2. AC parameter is changed. tRP(min.) : 30ns --> 25ns 3. A recovery time of minimum 1s is required before internal circuit gets ready for any command sequences as shown in Figure 17. ---> A recovery time of minimum 10s is required before……
