EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > SAMSUNG > K9F1G16Q0M-PCB0

K9F1G16Q0M-PCB0

器件名称: K9F1G16Q0M-PCB0
功能描述: 1Gb Gb 1.8V NAND Flash Errata
文件大小: 713.91KB    共38页
生产厂商: SAMSUNG
下  载:    在线浏览   点击下载
简  介:ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table Affected Products : K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0 Improvement schedule : The components targeted to meet the specification is scheduled to be available by workweek 25 along with the final specification values. Workaround : Relax the relevant timing parameters according to the table. Table Parameters Specification Relaxed Condition tWC 45 80 tWH 15 20 tWP 25 60 tRC 50 80 tREH 15 20 tRP 25 60 UNIT : ns tREA 30 60 tCEA 45 75 Sincerely, chwoosun@sec.samsung.com Product Planning & Application Eng. Memory Division Samsung Electronics Co. 1 K9F1G08U0M-VCB0,VIB0,FCB0,FIB0 K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0 FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Iol(R/B) of 1.8V is changed. - min. value : 7mA --> 3mA - Typ. value : 8mA --> 4mA 2. AC parameter is changed. tRP(min.) : 30ns --> 25ns 3. A recovery time of minimum 1s is required before internal circuit gets ready for any command sequences as shown in Figure 17. ---> A recovery time of minimum 10s is required before……
相关电子器件
器件名 功能描述 生产厂商
K9F1G16Q0M-PCB0 1Gb Gb 1.8V NAND Flash Errata SAMSUNG
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2