器件名称: BC856
功能描述: TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 228.58KB 共1页
简 介:DC COMPONENTS CO., LTD.
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BC856
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.
SOT-23
.020(0.50) .012(0.30)
Pinning
1 = Base 2 = Emitter 3 = Collector
3 1
.063(1.60) .055(1.40)
.108(0.65) .089(0.25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -80 -65 -5 -100 225 +150 -55 to +150 Unit V V V mA mW
o o
.091(2.30) .067(1.70) .118(3.00) .110(2.80)
.045(1.15) .034(0.85)
.051(1.30) .035(0.90) .026(0.65) .010(0.25)
.0043(0.11) .0035(0.09)
C C
.004 Max (0.10)
.027(0.67) .013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO
(1)
Min -80 -65 -5 -600 75 2%
Typ -75 -250 -700 -850 150 4.5
Max -15 -300 -650 -750 -820 800 -
Unit V V V nA mV mV mV mV mV mV MHz pF
Test Conditions IC=-100A IC=-1mA IE=-1A VCB=-30V IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V VCB=-10V, f=1MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge……