器件名称: 85HFR80
功能描述: SILICON POWER DIODE
文件大小: 78.03KB 共1页
简 介:85HF / 85HFR
SILICON POWER DIODE
DO-5
FEATURES Diffused Series Available in Normal & Reverse Polarity Industrial Grade Available In Avalanche Characteristic * Available in metric and UNF thread ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current T=1250C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec Maximum peak repetitive surge current Maximum I2t rating (non-rep.) for 5 to 10 85A
8.0
NAINA
POLARITY A C
Normal Reverse
7 4.0 12 27
11.5
C
A
17 A/F M8 x 1.25 16
1.4V 1270 A 405 A 8064 A2 Sec
POLARITY A C
Normal Reverse
C
A
17 A/F
12
32 11.5
msec.
M 8 x 1.25
THERMAL MECHANICAL SPECIFICATIONS
θ JC
Tj Tstg
W
Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperature Mounting torque (Non-lubricated threads) Approx, weight
0.500C/W -650C to 1500C -650C to 2000C 0.4 M-kg min, 0.6 M-kg max 13.5 & 30 gms.
ELECTRICAL RATINGS TYPE VRRM 85HF/HFR Max. repetitive peak reverse voltage (v) VR(RMS) VR Max. R.M.S. reverse voltage(V) Max. D.C. Blocking Voltage (V) Recommended R.M.S. working Voltage(v) Max. Average reverse leakage current @ VRRM Tc 250C uA 70 100 40 200 140 200 80 200 280 400 160 200 420 600 240 200 560 800 320 200 700 1000 400 200 840 1200 480 200 980 1120 10 100 20 200 40 400 60 600 80 800 100 1000 120 1200 140 160
1400 1600
1400 1600 560 200 640 200
IR(AV)
NAINA SEMICONDUCTOR LTD., D-95,SECTOR 63 NOIDA(INDIA) e-mail: sales@nainasemi.c……
