器件名称: 6290
功能描述: Complementary Power Transistors
文件大小: 365.83KB 共6页
简 介:2N6109, 6290
Complementary Power Transistors
Features:
Collector-Emitter sustaining voltageVCEO(sus) = 50V (Minimum) - 2N6109, 2N6290. DC current gain specified to 7.0 Amperes hFE = 2.3 (Minimum) at IC = 7.0A - 2N6109, 2N6290. Complementary Silicon Plastic Power Transistors.
Dimensions A B C D E F G H I J K Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). L M O
Minimum 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.20 0.33 2.48 3.70
Maximum 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.98 1.38 2.97 0.55 2.98 3.90
PNP 2N6109 7 Ampere
NPN 2N6290
Complementary Silicon Power Transistors 50 Volts 40 Watts
TO-220
Dimensions : Millimetres
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Complementary Power Transistors
Maximum Ratings
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PD TJ, TSTG 2N6109 2N6290 50 60 5.0 7.0 10 3.0 40 0.32 -65 to +150 W W/°C °C V Unit
A
Thermal Characteristic
Characteristic Thermal Resistance Junction to Case Symbol Rθjc Maximum 3.125 Unit °C/W
Figure 1 - Power Derating
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Complementary Power Transistors
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter Off Characteristics Collector-Emitter Sustaining Voltage (1) (IC = 100mA, IB = 0) Symbol Minimum Maximum Unit
VCEO(sus)
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