器件名称: 2V4BCB
功能描述: Silicon Epitaxial Planar Zener Diodes
文件大小: 306.57KB 共3页
简 介:BC Series
Silicon Epitaxial Planar Zener Diodes
Max. 0.45
Max. 1.9
Min. 27.5
Black Cathode Band Black Part No.
XXX
Max. 2.9
Min. 27.5
Glass Case DO-34 Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range
1)
Symbol Ptot Tj Tstg
Value 500
1)
Unit mW
O
175 - 65 to + 175
C C
O
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
Characteristics at Ta = 25 OC (VF = 1 V Max. at IF = 100 mA)
Type Min. (V) 2V2BC 2V2BCA 2V2BCB 2V4BC 2V4BCA 2V4BCB 2V7BC 2V7BCA 2V7BCB 3V0BC 3V0BCA 3V0BCB 3V3BC 3V3BCA 3V3BCB 3V6BC 3V6BCA 3V6BCB 3V9BC 3V9BCA 3V9BCB 4V3BC 4V3BCA 4V3BCB 2.09 2.12 2.22 2.3 2.33 2.43 2.5 2.54 2.69 2.8 2.85 3.01 3.1 3.16 3.32 3.4 3.47 3.62 3.7 3.77 3.92 4 4.05 4.2 Zener Voltage Max. (V) 2.41 2.3 2.41 2.64 2.52 2.63 2.9 2.75 2.91 3.2 3.07 3.22 3.5 3.38 3.53 3.8 3.68 3.83 4.1 3.98 4.14 4.5 4.26 4.4
1)
Maximum Dynamic Resistance at lZT (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 ZZT () 120 120 120 100 100 100 100 100 100 80 80 80 70 70 70 60 60 60 50 50 50 40 40 40 at lZT (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20
Maximum Standing Dynamic Resistance ZZK () 2000 2000 2000 2000 2000 2000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 at lZK (mA) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
Maximum Reverse Leakage Current IR (A) 120 120 120……
