器件名称: 2SK213-E
功能描述: Silicon N Channel MOS FET
文件大小: 65.36KB 共6页
简 介:2SK213, 2SK214, 2SK215, 2SK216
Silicon N Channel MOS FET
REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005
Application
High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79
Features
Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D G 1. Gate 2. Source (Flange) 3. Drain S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK213, 2SK214, 2SK215, 2SK216
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage 2SK213 2SK214 2SK215 2SK216 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C VGSS ID IDR Pch 1 Pch* Tch Tstg Symbol VDSX Ratings 140 160 180 200 ±15 500 500 1.75 30 150 –45 to +150 V mA mA W W Unit V
°C °C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown 2SK213 voltage 2SK214 2SK215 2SK216 Gate to source breakdown voltage Gate to source voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Note: 2. Pulse test Symbol V(BR)DSX Min 140 160 180 V(BR)GSS VGS(on) VDS(sat) |yfs| Ciss Crss 200 ±15 0.2 — 20 — — Typ — — — — — — — 40 90 2.2 Max — — — — — 1.5 2.0 — — — Unit V V V V V V V mS pF pF IG = ±10 A, VDS = 0 ID = 10 mA, VDS = 10 V * 2 ID = 10 mA, VGD = 0 * ID = 10……
