器件名称: 2SK2133
功能描述: MOS Field Effect Power Transistor
文件大小: 46.33KB 共1页
简 介:SMD Type
MOS Field Effect Power Transistor 2SK2133
TO-263
+0.1 1.27 -0.1
IC MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Low on-resistance RDS(on)=0.21 MAX.@VGS=10V,ID=8.0A
+0.2 8.7 -0.2
High avalanche capabil
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+0.2 5.28 -0.2
2.54
+0.2 -0.2 +0.1 5.08-0.1
+0.2 2.54 -0.2
+0.2 15.25 -0.2
Low Ciss Ciss=1090 pF TYP.
2.54
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 250 30 16 64 1.5 75 150 -55 to +150 Unit V V A A W W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=250V,VGS=0 VGS= 30V,VDS=0 2.0 4.0 0.2 1090 VDS=10V,VGS=0,f=1MHZ 420 80 20 ID=8.0A,VGS(on)=10V,RL=18.75 ,RG=10 ,VDD=150V 40 60 20 0.26 pF pF pF ns ns ns ns Min Typ Max 100 10 4.0 Unit A A V S
VGS(off) VDS=10V,ID=1mA Yfs VDS=10V,ID=8.0A
RDS(on) VGS=10V,ID=8.0A Ciss Coss Crss td(on) tr td(off) tf
5.60
1 Gate 2 Drain 3 Source
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1
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