器件名称: 2SJ181S
功能描述: P-Channel MOS FET For High-Speed Switching
文件大小: 45.51KB 共2页
简 介:SMD Type
P-Channel MOS FET For High-Speed Switching 2SJ181S
TO-252
MOSFET
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
Features
Low on-resistance High speed switching
+0.2 9.70-0.2
+0.15 1.50-0.15
+0.15 6.50-0.15 +0.2 5.30-0.2
+0.1 0.80-0.1
Suitable for switching regulator and DC-DC converter
+0.28 1.50-0.1
+0.25 2.65-0.1
No secondary breakdown
2.3
+0.15 4.60-0.15
+0.15 0.50-0.15
Low drive current
0.127 max
+0.15 5.55-0.15
+0.1 0.60-0.1
1Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Drain peak current * Channel dissipation (Tc=25 Channel temperature Storage temperature * PW 10 ìs, duty cycle 1% ) Symbol VDSS VGSS ID(DS) ID(pulse) Pch Tch Tstg Rating -600 15 -0.5 -1 20 150 -55 to +150 Unit V V A A W
3.80
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1
SMD Type
2SJ181S
Electrical Characteristics Ta = 25
Parameter Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static Drain to source on stateresistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Symbol VDSS VGSS IGSS IDSS Testconditons ID = -10 mA, VGS = 0 IG = VGS = 100 A, VDS = 0 Min -600 15
MOSFET
Typ
Max
Unit V V
12 V, VDS = 0
10 -100 -2 15 0.3 0.45 220 55 13 -4 25……
