器件名称: 2SD1163A
功能描述: Silicon NPN Power Transistors
文件大小: 123.95KB 共3页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1163
DESCRIPTION Collector Current: IC= 7A Collector-Emitter BreakdownVoltage: V(BR)CEO= 120V(Min.)
APPLICATIONS Designed for TV horizontal deflection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IC(surge)
Collector Current-Surge Total Power Dissipation @ TC=25℃ Junction Temperature
20
A
PC
40
W
TJ
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1163
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA ; RBE= ∞
120
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10mA ; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
B
2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
B
1.2
V
ICBO
Collector Cutoff Current
VCB= 300V ; IE= 0
5
mA
hFE
DC Current Gain
IC= 5A ; VCE= 5V
25
tf
Fall Time
ICP= 3.5A; IB1= 0.45A
0.5
μs
isc Website:www.iscsemi.cn
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