器件名称: 2SD1138
功能描述: Silicon NPN Power Transistors
文件大小: 96.23KB 共4页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1138
DESCRIPTION With TO-220C package Complement to type 2SB861 APPLICATIONS Low frequency high voltage power amplifier TV vertical deflection output
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -45~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 200 150 6 2 5 1.8 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=50mA; RBE=∞ IE=5mA; IC=0 IC=0.5 A;IB=50m A IC=50mA ; VCE=4V VCB=120V; IE=0 IC=50mA ; VCE=4V IC=0.5A ; VCE=10V IE=0 ;VCB=100V,f=1MHz 60 60 20 MIN 150 6 TYP.
2SD1138
MAX
UNIT V V
3.0 1.0 1 320
V V μA
pF
hFE-1 classifications B C 100-200 D 160-320
60-120
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1138
Fig.2 Outline dime……