器件名称: 2SC4880
功能描述: Silicon NPN Power Transistors
文件大小: 89.28KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4880
DESCRIPTION With TO-3PML package High breakdown voltage High speed switching APPLICATIONS For color TV display horizontal deflection output applications PINNING
PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1700 900 5 12 100 150 -55~150 UNIT V V V A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4880
TYP.
MAX
UNIT
V(BR )CEO
Collector-emitter breakdown voltage
IC=10mA; RBE=∞
900
V
V(BR )EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=10A; IB=2.5 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=10A; IB=2.5 A
1.5
V
ICES
Collector cut-off current
VCE=1700V;RBE=0
500
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=1A ; VCE=5V
8
40
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4880
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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