器件名称: 2SC4742
功能描述: Silicon NPN Power Transistors
文件大小: 113.36KB 共3页
简 介:Product Specification
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Silicon NPN Power Transistors
DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High breakdown voltage APPLICATIONS ·Character display horizontal deflection output
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2SC4742
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL VCEO VEBO IC IC(peak) IC(surge) Io PC Tj Tstg PARAMETER Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector current-surge C to E diode forward current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open base Open collector CONDITIONS VALUE 1500 6 6 7 16 7 50 150 -55~150 UNIT V V A A A A W ℃ ℃
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Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC4742
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO ICES hFE VCE(sat) VBE(sat) VECF tf PARAMETER Emitter-base breakdown voltage Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Diode forward voltage Fall time CONDITIONS IE=400mA ;IC=0 VCE=1500V; RBE=0 IC=1A ; VCE=5V IC=5A ; IB=1.25A IC=5A ; IB=1.25A IF=6A ICP=5A; IB1=1A;IB2=-2A MIN 6 0.5 25 2.0 1.5 2.0 0.4 V V V μs TYP. MAX UNIT V mA
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4742
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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