器件名称: 2SC4617
功能描述: General purpose transistor
文件大小: 91.3KB 共3页
简 介:SMD Type
General purpose transistor 2SC4617
Transistors
SOT-523
+0.1 1.6-0.1
Unit: mm
Features
Low Cob : Cob=2.0pF (Typ.)
2
+0.1 1.0-0.1 +0.05 0.2-0.05
+0.01 0.1-0.01
1
+0.15 1.6-0.15
NPN silicon transistor
+0.05 0.8-0.05
+0.25 0.3-0.05
0.5
+0.1 -0.1
0.35
3
0.55
1. Base
+0.05 0.75-0.05 +0.1 0.8-0.1
2. Emitter 3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 7 0.15 0.15 150 -55 to +150 Unit V V V A W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE IC=50ìA IC=1mA IE=50ìA VCB=60V VEB=7V VCE=6V, IC=1mA 120 Testconditons Min 60 50 7 0.1 0.1 560 0.4 2 180 3.5 V pF MHz Typ Max Unit V V V A A
VCE(sat) IC/IB=50mA/5mA Cob fT VCE=12V, IE=0A, f=1MHz VCE=12V, IE=-2mA, f=100MHz
hFE Classification
Marking Rank hFE 120 BQ Q 270 180 BR R 390 270 BS S 560
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SMD Type
2SC4617
Typlcal Characteristics
Transistors
Fig.1 Grounded Emitter Propagation Characteristics
Fig.2 Grounded Emitter Output Characteristics
Fig.3 Grounded Emitter Output Characteristics
Fig.4 DC Current Gain……
