器件名称: 2SC4616
功能描述: Silicon NPN Triple Diffused Type Transistor
文件大小: 44.2KB 共2页
简 介:SMD Type
Transistors
Silicon NPN Triple Diffused Type Transistor 2SC4616
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
Large current calcity (IC=2A)
+0.2 9.70 -0.2
High blocking voltage(VCEO
400V)
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC=25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 400 400 5 4 2 1 15 150 -55 to +150 Unit V V V A A W W
3 .8 0
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1
SMD Type
2SC4616
Electrical Characteristics Ta = 25
Parameter Collector cut-off Current Emitter Cut-off Current DC Current Gain Gain-Bandwidth product C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Output capacitance Turn-ON Time Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO cob ton Testconditons VCB=300V,IE=0 VEB=4V,IC=0 VCE=10V,IC=100mA VCE=10V,IC=100mA IC=500mA,IB=50mA IC=500mA,IB=50mA IC=10ìA,IE=0 IC=1mA,RBE= IE=10ìA,IC=0 VCB=30V,f=1MHz 400 400 5 15 40 60 Min
Transistors
Typ
Max 1 1 200
Unit ìA ìA
MHz 1 1 V V V V V pF
0.085
Storage Time
tstg
4
ìs
Fall Time
tr
0.6
hFE Classification
TYPE hFE C ……
