器件名称: 2SC4603R
功能描述: Silicon NPN Power Transistor
文件大小: 242.4KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4603R
DESCRIPTION High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min.) High Switching Speed High Reliability
APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base voltage
Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range
w w
s c s i . w
VALUE 900 UNIT V 800 10 3 1 80 150 -55~150 V V A A W ℃ ℃
n c . i m e
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.5 UNIT ℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4603R
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
800
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
900
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
10
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
B
1.0
V
VBE(sat) ICBO
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
B
1.5
V
Collector Cutoff Current
VCB= 900V; IE= 0
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
Sw……
