器件名称: 2SC4583
功能描述: Silicon NPN Power Transistor
文件大小: 243.13KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4583
DESCRIPTION Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V(Min) Fast Switching speed
APPLICATIONS Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
VALUE 1200 800 7
UNIT V
Collector Current-Continuous Collector Current-Peak
Base Current-Continuous Base Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature
w w
s c s i . w
V V 3 A 6 A 1 2 50 150 -55~150 A A W ℃ ℃
n c . i m e
IBM PT TJ Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT ℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0 IC= 1.5A; IB= 0.3A IC= 1.5A; IB= 0.3A At rated Voltage At rated Voltage At rated Voltage MIN 800
2SC4583
TYP.
MAX
UNIT V
1.0 1.5 100 100 100
V V μA μA μA
IC= 1.5A; VCE= 5V
Current-Gain—Bandwidth Product
Switching time……
