器件名称: 2SC4549
功能描述: isc Silicon NPN Power Transistor
文件大小: 246.82KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4549
DESCRIPTION Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V(Min) High DC Current Gain: hFE= 100(Min)@ (VCE= 2V , IC= 1A) Low Saturation Voltage: VCE(sat)= 0.3V(Max)@ (IC= 3A, IB= 0.15A)
B
APPLICATIONS Designed for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Total Power Dissipation @TC=25℃
w w
s c s i . w
VALUE 100 60 V V 7.0 V 5.0 10 2.5 25 W 2.0 150 -55~150 ℃ ℃ A A A
UNIT
n c . i m e
PT Total Power Dissipation @Ta=25℃ TJ Tstg Junction Temperature Storage Temperature
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICER ICEX IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 3.0A ; IB= 0.3……
