器件名称: 2SC4546
功能描述: Silicon NPN Power Transistor
文件大小: 230.87KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4546
DESCRIPTION Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) High Switching Speed
APPLICATIONS Designed for switching regulator, lighting inverter and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
w
ww
s c s .i
VALUE 600 V 400 V 7 V 7 A 14 A 2 A
UNIT
n c . i m e
ICM
Collector Current-Peak
IB
Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature
PC
30
W ℃
TJ
150
Tstg
Storage Temperature
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4546
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 25mA; IB= 0
400
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
B
0.7
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
B
1.3
V
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
100
μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
100
μA
hFE
DC Current Gain
IC= 3A; VCE= 4V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
Switching Times
ton
Turn-On Time
w w
s c s i . w
IE= 0; VCB= 10V; f= 1MHz
IE= -0.5A; VCE= 12V
n c . i m e
10
25
55
p……
