器件名称: 2SC4544
功能描述: isc Silicon NPN Power Transistor
文件大小: 226.22KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4544
DESCRIPTION Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min) Small Collector Ouptut Capacitance
APPLICATIONS High voltage switching and amplifier applications. Color TV horizontal driver applications. Color TV chroma output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
w
ww
s c s .i
UNIT 300 V 300 V 7 V 0.1 A 50 mA 8 W
n c . i m e
IB
Base Current-Continuous Collector Power Dissipation @TC=25℃
PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 2
150
℃
Tstg
Storage Temperature
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4544
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA ; IB= 0
300
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 10mA; IB= 1mA
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10mA; IB= 1mA
1.0
V
ICBO
Collector Cutoff Current
VCB= 240V ; IE= 0
1.0
μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
hFE-2
DC Current Gain
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
w w
w.
m e s isc
IC= 4mA ; VCE= 10V IC= 20mA ; VCE= 10V IE= 0; V……
