器件名称: 2SC4542
功能描述: isc Silicon NPN Power Transistor
文件大小: 236.03KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4542
DESCRIPTION High Breakdown Voltage: VCBO= 1500V (Min) High Switching Speed
APPLICATIONS Horizontal deflection output for high resolution display. High speed switching regulator output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current- Continuous
w w
s c s i . w
1500 V 600 V 5 V 10 A 20 A 5 A 50 W
n c . i m e
ICM
Collector Current- Peak
IB
B
Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature
PC
TJ
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4542
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 7A; IB= 1.7A
B
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 7A; IB= 1.7A
B
1.5
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; I IB= 0
600
V
ICBO
Collector Cutoff Current
VCB= 1500V ; IE= 0
1.0
mA
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
fT
Current-Gain—Bandwidth Product
COB
Output Capacitance
Switching Times
tstg
Storage Time
w
. w w
n c . i m e s c is
IC= 1A ; VCE= 5V 8 IC= 0.1A ; VCE= 10V 1 IE= 0 ; VCB= 10V;ftest= 1.0MHz ICP= 7A , IB1= 1.……
