器件名称: 2SC4213
功能描述: Silicon NPN Epitaxial
文件大小: 51.51KB 共1页
简 介:SMD Type
Silicon NPN Epitaxial 2SC4213
Features
High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1 (typ.) (IB = 5 mA). High DC current gain: hFE = 200 1200. Small package.
Transistors IC
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 20 25 300 60 100 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO hFE Testconditons VCB = 50 V, IE = 0 VEB = 25 V, IC = 0 VCE = 2 V, IC = 4 mA 200 0.042 0.61 30 4.8 160 7 Min Typ Max 0.1 0.1 1200 0.1 V V MHz pF ns Unit ìA ìA
VCE (sat) IC = 30 A, IB = 3 mA VBE fT Cob ton VCE = 2 V, IC = 4 mA VCE = 6 V, IC = 4 mA VCB = 10 V, IE = 0, f = 1 MHz
Storage time
tstg
500
ns
Fall time
tf Duty cycle 2%
130
ns
hFE Classification
Marking hFE AA 200 700 AB 350 1200
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