器件名称: 2SC4139
功能描述: Silicon NPN Power Transistors
文件大小: 156.11KB 共4页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4139
DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg
固电
体 导 半
PARAMETER
A H C IN
Collector current Base current
Collector-base voltage
Collector-emitter voltage
EM S E NG
Open base
Open emitter
D N O IC
CONDITIONS
R O T UC
VALUE 500 400 10 15 30 5
UNIT V V V A A A W ℃ ℃
Emitter-base voltage
Open collector
Collector current-pulse
Collector power dissipation Junction temperature Storage temperature
TC=25℃
120 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4139
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ; IB=0 IC=8A; IB=1.6A IC=8A; IB=1.6A VCB=500V ;IE=0 VEB=10V; IC=0 IC=8A ; VCE=4V IE=-1.5A ; VCE=12V f=1MHz ; VCB=10V 10 10 MIN 400 0.5 1.3 100 100 30 MHz pF TYP. MAX UNIT V V V μA μA
Switching times ton tstg tf
固电 IN
Fall time
体 导 半
Turn-on ti……
