器件名称: 2SC4138
功能描述: isc Silicon NPN Power Transistor
文件大小: 233.26KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4138
DESCRIPTION High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) High Switching Speed High Reliability
APPLICATIONS Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base voltage
IC
Collector Current-Continuous
w
ww
s c s .i
UNIT 500 V 400 V 10 V 10 A 20 A 4 A
n c . i m e
ICM
Collector Current-Peak
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
PC
80
W ℃
TJ
150
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4138
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 25mA ; IB= 0
400
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
B
0.5
V
VBE(sat) ICBO
Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
B
1.3
V
Collector Cutoff Current
VCB= 500V ; IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
0.1
mA
hFE
DC Current Gain
IC= 6A ; VCE= 4V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
Switching Times
ton
Turn-on Time
tstg
Storage Time
w w
s c s i . w
IE= 0 ; VCB= 10V; ftest=1.0MHz
IE= ……
