器件名称: 2SC4008
功能描述: isc Silicon NPN Power Transistor
文件大小: 241.81KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4008
DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) Wide Area of Safe Operation Complement to Type 2SA1635
APPLICATIONS Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w w
s c s i . w
VALUE UNIT 100 V 80 V 6 V 4 A 6 A 30 W
n c . i m e
IC
Collector Current-Continuous
ICM
Collector Current-Peak Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 50μA; IE= 0 IC= 25mA; IB= 0 IE= 50μA; IC= 0 IC= 2A; IB= 0.2A
B
2SC4008
MIN 100 80 6
TYP.
MAX
UNIT V V V
1.0 1.5 10 10 500 10 60
V V μA μA
IC= 2A; IB= 0.2A
B
VCB= 100V; IE= 0 VEB= 6V; IC= 0
Current-Gain—Ban……
