器件名称: 2SC3365
功能描述: Silicon NPN Power Transistors
文件大小: 155.53KB 共4页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3365
DESCRIPTION ·With TO-3PN package ·High voltage ,high speed APPLICATIONS ·For high speed and high power switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg
固电
体 导 半
PARAMETER
Collector-base voltage
INC
Collector-emitter voltage
Emitter-base voltage
EM S E G N A H
Open base
Open emitter
D N O IC
CONDITIONS
R O T UC
VALUE 500 400 10 10 20 5
UNIT V V V A A A W ℃ ℃
Open collector
Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃
80 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ;RBE=∞,L=100mH IE=10mA ;IC=0 IC=5A; IB=1A IC=5A ;IB=1A VCB=400V; IE=0 VCE=350V; RBE=∞ IC=5A ; VCE=5V IC=10A ; VCE=5V 12 MIN 400 10
2SC3365
TYP.
MAX
UNIT V V
1.0 1.5 50 50
V V μA μA
Switching times resistive load ton ts tf Turn-on time
固电
Fall time
体 导 半……