器件名称: 2SC2898
功能描述: Silicon NPN Power Transistors
文件大小: 169.56KB 共4页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2898
DESCRIPTION ·With TO-220C package ·High voltage,high speed ·High power switching
·
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER
固电
Collector-base voltage
Collector-emitter voltage
体 导 半
CONDITIONS Open emitter Open base
A H C IN
Base current
Emitter-base voltage
Collector current (DC)
EM S E NG
Open collector
D N O IC
R O T UC
VALUE 500 400 7 8 16 4
UNIT V V V A A A W ℃ ℃
Collector current-Peak
Collector power dissipation Junction temperature Storage temperature
TC=25℃
50 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR) EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A; L=100mH IE=10mA ;IC=0 IC=4.0A; IB=0.8A(pulse test) IC=4.0A; IB=0.8A(pulse test) VCB=400V; IE=0 VCE=350V; RBE=∞ IC=4A ; VCE=5V(pulse test) IC=8A ; VCE=5V(pulse test) 15 MIN 400 7
2SC2898
TYP.
MAX
UNIT V V
1.0 1.5 50 50
V V μA μA
Switching times ton ts tf
固电
Fall time
Turn-on time Storage time
体 导 半
A H C IN
EM S E NG
IC=8A, IB……
