器件名称: 2SC2816
功能描述: Silicon NPN Power Transistors
文件大小: 153.86KB 共4页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2816
DESCRIPTION ·With TO-220C package ·High voltage ·High speed APPLICATIONS ·For high voltage ,high speed and high power switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
·
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg
固电
体 导 半
PARAMETER
A H C IN
Collector current Base current
Collector-base voltage
Collector-emitter voltage
EM S E NG
Open emitter Open base Open collector
CONDITIONS
D N O IC
R O T UC
VALUE 500 400 7 5 10 2.5
UNIT V V V A A A W ℃ ℃
Emitter-base voltage
Collector current-peak
Collector power dissipation Junction temperature Storage temperature
TC=25℃
40 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=0.2A ; RBE=∞;L=100mH MIN
2SC2816
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
400
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=2.5A; IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2.5A; IB=0.5A
1.5
V μA μA
ICBO
Collector cut-off current
VCB=400V ;IE=0 VCE=350V ; RBE=∞
50
ICEO
Collector cut-off current
50
hFE-1
DC current gain
IC=2.5 A ; VCE=5V
hFE-2
Switching times
固电 IN
DC current gain
体 导 半
IC=5 A ; VCE=5V
ton
Turn-on time
ts
Storag……
