器件名称: 2SC2613
功能描述: Silicon NPN Power Transistors
文件大小: 150.01KB 共4页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2613
DESCRIPTION ·With TO-220 package ·High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS ·For high voltage ,high speed and high power switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg
固电
体 导 半
PARAMETER
A H C IN
Collector current Base current
Collector-base voltage
Collector-emitter voltage
EM S E NG
Open emitter Open base
D N O IC
CONDITIONS
R O T UC
VALUE 500 400 7 5 10 2.5
UNIT V V V A A A W ℃ ℃
Emitter-base voltage
Open collector
Collector current-peak
Collector power dissipation Junction temperature Storage temperature
TC=25℃
40 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,RBE=∞,L=100mH IE=10mA; IC=0 IC=2.5A; IB=0.5A IC=2.5A; IB=0.5A VCB=400V; IE=0 VCE=350V; RBE=∞ IC=2.5A ; VCE=5V IC=5A ; VCE=5V 15 7 MIN 400 7 TYP.
2SC2613
MAX
UNIT V V
1.0 1.5 100 100
V V μA μA
Switching times ton tstg tf
固电
Fall time
体 导 半
A H C IN
Storage t……
