器件名称: 2SC1610
功能描述: Silicon NPN Power Transistors
文件大小: 129.86KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1610
DESCRIPTION With TO-3 package High current capability Fast switching speed APPLICATIONS For high speed power switching applications
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 150 100 6 10 100 175 -55~175 UNIT V V V A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO ICEO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A; IB=0 IC=1m A; IE=0 IE=1mA; IC=0 IC=10 A;IB=1 A IC=10 A;IB=1 A VCB=100V; IE=0 VCE=60V; IB=0 VEB=6V; IC=0 IC=5A ; VCE=5V 30 MIN 100 150 6
2SC1610
TYP.
MAX
UNIT V V V
1.0 2.0 0.1 1.0 0.1 160
V V mA mA mA
2
Inchange Semiconductor
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