器件名称: 2SC1609
功能描述: Silicon NPN Power Transistors
文件大小: 129.88KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1609
DESCRIPTION With TO-3 package High current capability Fast switching speed APPLICATIONS Motor control Linear and switching applications
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 140 120 6 25 30 120 175 -55~175 UNIT V V V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A; IB=0 IE=1mA; IC=0 IC=10A;IB=1A IC=20A;IB=2A IC=20A;IB=2A VCB=140V; IE=0 VEB=6V; IC=0 IC=13A ; VCE=2V IC=20A ; VCE=4V 20 10 MIN 120 6
2SC1609
TYP.
MAX
UNIT V V
0.6 1.2 2.0 0.1 0.1 100
V V V mA mA
……
