器件名称: 2SC1586
功能描述: Silicon NPN Power Transistors
文件大小: 128.22KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1586
DESCRIPTION With TO-3 package High power dissipation High current capability APPLICATIONS For audio power amplifier and general purpose applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 250 200 6 15 4 150 150 -55~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC1586
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
200
V
V(BR)EBO VCEsat
Emitter-base breakdown voltage
IE=1mA ;IC=0 IC=5A; IB=0.5A
6
V
Collector-emitter saturation voltage
2.0
V
ICBO
Collector cut-off current
VCB=250V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=5A ; VCE=4V
60
fT
Transition frequency
IC=1A ; VCE=12V
10
MHz
COB
Collector output capacitance
IE=0 ; VCB= 10V; f=1MHz
110
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1586
Fig.2 outline dimensio……