EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > ISC > 2SC1586

2SC1586

器件名称: 2SC1586
功能描述: Silicon NPN Power Transistors
文件大小: 128.22KB    共3页
生产厂商: ISC
下  载:    在线浏览   点击下载
简  介:Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1586 DESCRIPTION With TO-3 package High power dissipation High current capability APPLICATIONS For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 250 200 6 15 4 150 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1586 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 200 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ;IC=0 IC=5A; IB=0.5A 6 V Collector-emitter saturation voltage 2.0 V ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=4V 60 fT Transition frequency IC=1A ; VCE=12V 10 MHz COB Collector output capacitance IE=0 ; VCB= 10V; f=1MHz 110 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1586 Fig.2 outline dimensio……
相关电子器件
器件名 功能描述 生产厂商
2SC1586 Silicon NPN Power Transistors ISC
2SC1586 Silicon NPN Power Transistors SAVANTIC
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2