器件名称: 2SC1584
功能描述: Silicon NPN Power Transistors
文件大小: 128.03KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1584
DESCRIPTION With TO-3 package High power dissipation High current capability APPLICATIONS For audio power amplifier and general purpose applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 100 6 15 4 150 150 -55~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC1584
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
100
V
V(BR)EBO VCEsat
Emitter-base breakdown voltage
IE=1mA ;IC=0 IC=5A; IB=0.5A
6
V
Collector-emitter saturation voltage
2.0
V
ICBO
Collector cut-off current
VCB=150V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=5A ; VCE=4V
30
fT
Transition frequency
IC=1A ; VCE=12V
10
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1584
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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