器件名称: 2SC1469
功能描述: Silicon NPN Power Transistors
文件大小: 117.15KB 共3页
简 介:SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1469
DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For high voltage ,fast switching applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC-25 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 10 4 100 200 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=100mA ; IB=0 IC=5A; IB=1A IC=5A; IB=1A VCB=500V; IE=0 VCE=400V; IB=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=5V 15 8 MIN 400
2SC1469
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT
TYP.
MAX
UNIT V
1.0 2.0 0.1 0.1 0.1 50
V V mA mA mA
10
MHz
2
SavantIC Semiconductor
Product Specification
Silicon N……