器件名称: 2SC1212
功能描述: Silicon NPN Power Transistors
文件大小: 151.77KB 共4页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1212 2SC1212A
DESCRIPTION ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
·
Absolute maximum ratings(Ta=25℃)
SYMBOL
固
导体 半 电
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector- emitter voltage
VEBO IC
Emitter-base voltage Collector current
N A H INC
M E S GE
2SC1212A 2SC1212 2SC1212A Ta=25℃
2SC1212
Open emitter
D N O IC
CONDITIONS
R O T UC
VALUE 50 80 50 80
UNIT
V
Open base
V
Open collector
4 1 0.75
V A
PD
Total power dissipation TC=25℃ 8 150 -55～+150
W
Tj Tstg
Junction temperature Storage temperature
℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SC1212 V(BR)CEO Collector-emitter breakdown voltage 2SC1212A 2SC1212 V(BR)CBO Collector-base breakdown voltage 2SC1212A V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain IE=1mA ;IC=0 IC=1A ;IB=0.1A IC=50mA ; VCE=4V VCB=50V; IE=0 IC=50mA ; VCE=4V IC=1A ; VCE=4V IC=1mA ;IE=0 IC=10mA ;RBE=∞ CONDITIONS
2SC1212 2SC1212A
MIN 50
TYP.
MAX
UNIT
V 80 50 V 80 4 1.5 1.0 5 60 20 V V V μA
固
导体 半 电 G N A CH
C
Transition frequency
hFE-1 Classifi……
