器件名称: 2SC1195
功能描述: Silicon NPN Power Transistors
文件大小: 118.66KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1195
DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·For line operated audio output amplifier and switching power supply drivers applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER
固
导体 半 电 M E S GE
N A H INC
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Open emitter
D N O IC
CONDITIONS
R O T UC
VALUE 200 200 5 2.5
UNIT V V V A W ℃ ℃
Open base Open collector
Collector power dissipation Junction temperature Storage temperature
TC=25℃
100 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC1195
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ;IB=0
200
V
V(BR)CBO V(BR)EBO
Collector-base breakdown voltage
IC=1mA ;IE=0 IE=1mA ;IC=0
200
V
Emitter-base breakdown voltage
5
V
VCEsat
Collector-emitter saturation voltage
IC=2.5A; IB=0.5A
1.5
V
VBE
Base-emitter on voltage
IC=1A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=200V; IE=0
0.1
mA
IEBO
Emitter cut-off current
hFE
固
DC current gain
导体 半 电
VEB=5V; IC=0
0.1
mA
IC=1A ; VCE=5V
N A H INC
M E S GE
D N O IC
R O T UC
……
