器件名称: 2SC1027
功能描述: Silicon NPN Power Transistors
文件大小: 118.66KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1027
DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC convertor ·General purpose power amplifiers
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
固
导体 半 电
PARAMETER
Fig.1 simplified outline (TO-3) and symbol
N A H INC
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
M E S GE
D N O IC
CONDITIONS
R O T UC
VALUE 250 80 5 6
UNIT V V V A W ℃ ℃
Open emitter
Open base Open collector
Collector power dissipation Junction temperature Storage temperature
TC=25℃
50 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC1027
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
80
V
V(BR)CBO V(BR)EBO
Collector-base breakdown voltage
IC=1mA ;IE=0 IE=1mA ;IC=0
250
V
Emitter-base breakdown voltage
5
V
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=0.5A
1.5
V
ICBO
Collector cut-off current
VCB=250V; IE=0
0.1
mA
IEBO
Emitter cut-off current
hFE
固
DC current gain
导体 半 电
VEB=5V; IC=0
0.1
mA
IC=5A ; VCE=2V
N A H INC
M E S GE
D N O IC
R O T UC
10
2
I……
